On May 8, 2012, the Hybrid Memory Cube Consortium (HMCC), which promotes the popularization of a new generation of three-dimensional stacked DRAM called "Hybrid Memory Cube (HMC)" using TSV (Silicon Through Hole), announced that the software industry giant Microsoft of the United States has joined the association HMC is a technology that uses three-dimensional construction, overlaying multiple DRAM chips vertically on a logic chip, and then connecting and wiring through TSV. The biggest feature of HMC is that its performance can be greatly improved compared to existing DRAM. There are two reasons for the improvement. Firstly, the wiring distance between chips can be significantly reduced from the traditional "cm" unit of semiconductor packaging spread flat on the motherboard to tens of thousands μ m～1mm; The second is that one chip can form 10 to tens of thousands of TSVs, enabling multi-point connections between chips The reason why Microsoft joined HMCC is because it is considering how to address the "memory bottleneck" issue that is likely to become a performance improvement for personal computers and computers. Memory bottleneck refers to the inability of the current architecture of DRAM to meet the needs of processors as their performance continues to improve through multi-core processing. If this problem is not solved, there will be a situation where even if a new computer product is purchased, the actual performance will not be improved accordingly. By contrast, if TSV based HMC is applied to the main memory of a computer, the data transfer speed can be increased to about 15 times that of current DRAM. Therefore, not only Microsoft, but also microprocessor giants such as Intel in the United States are actively researching the use of HMC In fact, it is not just DRAM products such as HMC that plan to adopt TSV. According to the semiconductor manufacturer's plan, in the next few years, from the CMOS sensor that undertakes the input function of electronic equipment to the FPGA and multi-core processor responsible for computing, as well as DRAM and NAND flash memory in charge of product storage, will be imported into TSV successively. If the plan is carried out as scheduled, TSV will take on the main functions of electronic devices such as input, computation, and storage